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The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, we(More)
SRAM-based memory arrays designed in deeply scaled technologies become increasingly susceptible to soft errors. A full account of SRAM cell stability requires dynamic noise margin models that take into account the temporal behavior of noise injection mechanism. One critical component of dynamic noise margin analysis is the determination of stability(More)
In the past decades, aggressive scaling of transistor feature size has been a primary force driving higher Static Random Access Memory (SRAM) integration density. Due to technology scaling, nanometer SRAM designs become increasingly vulnerable to stability challenges. The traditional way of analyzing stability is through the use of Static Noise Margins(More)
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