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—This paper reports on the impact of shallow-trench isolation (STI) on flicker noise characteristics in 0.13-µm RF nMOSFETs. The drain noise current spectral density was measured in both triode and saturation regions for a more complete study. The devices with a relatively small finger width and a large finger number (W = 1 µm/N finger = 40 and W = 5 µm/N(More)
Magnetic patterning, with designed spatial profile of the desired magnetic properties, has been a rising challenge for developing magnetic devices at nanoscale. Most existing methods rely on locally modifying magnetic anisotropy energy or saturation magnetization, and thus post stringent constraints on the adaptability in diverse applications. We propose an(More)
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