Yeh-Liang Yeh

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Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricated in a stacked 2-μm InGaP/GaAs HBT, 0.5-μm AlGaAs/GaAs enhancement- and depletion-mode HEMT(More)
Design and analysis of a two-stage low-noise amplifier (LNA) and a bottom-series coupled quadrature voltage-controlled oscillator (QVCO) using a 65-nm CMOS dual-gate device are present in this paper. By using the proposed dual-gate device, the parasitic capacitance and the effective substrate resistance can be reduced. Moreover, the 3-dB cutoff frequency(More)
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