Learn More
We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO2 nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch(More)
In this work, we have demonstrated a straightforward and CMOS-compatible nanofabrication technique that can produce well-ordered periodic SiO2 nanohole arrays in wafer-scale using a single amorphous silicon (α-Si) layer. It is the first time that α-Si material has been used as an etch mask to fabricate SiO2 nanostructures. Our results have shown that the(More)
A novel nanofabrication technique which can produce highly controlled silicon-based nanostructures in wafer scale has been proposed using a simple amorphous silicon (α-Si) material as an etch mask. SiO2 nanostructures directly fabricated can serve as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate, or(More)
  • 1