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- Yaw-Hwang Chen, Su-Long Nyeo, Chiung-Yuh Yeh
- Physical review. E, Statistical, nonlinear, and…
- 2005

The evolutionary features based on the distributions of k-mers in the DNA sequences of various organisms are studied. The organisms are classified into three groups based on their evolutionary periods: (a) E. coli and T. pallidum (b) yeast, zebrafish, A. thaliana, and fruit fly, (c) mouse, chicken, and human. The distributions of 6-mers of these three… (More)

- Kwang-Jow Gan, Dong-Shong Liang, Cher-Shiung Tsai, Yaw-Hwang Chen, Chun-Ming Wen
- APCCAS
- 2006

The MOS-HBT-NDR device is made of metaloxidesemiconductor field-effect-transistor (MOS) and heterojunction bipolar transistor (HBT) devices, but it can show the negativedifferential-resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. We demonstrate a fivevalued logic circuit using the two-peak MOS-HBT-NDR circuit as the… (More)

- Dong-Shong Liang, Kwang-Jow Gan, +7 authors Feng-Chang Chiang
- Fifth International Workshop on System-on-Chip…
- 2005

This paper describes the design of a four-valued memory cell based on a three-peak MOS-NDR circuit. We connect three MOS-NDR devices in parallel that can create a three-peak current-voltage curve by suitably arranging the parameters. Due to its folding I-V characteristics, multiple-peak NDR device is a very promising device for multiple-valued logic… (More)

- Yaw-Hwang Chen
- 1996

PACS numbers: 11.10.Gh, 11.15.Bt, 12.38.Bx ABSTRACT A split dimensional regularization, which was introduced for the Coulomb gauge by Leibbrandt and Williams, is used to regularize the spurious singularities of Yang-Mills theory in the temporal gauge. Typical one-loop split dimensionally regularized temporal gauge integrals, and hence the renormalization… (More)

- Dong-Shong Liang, Cheng-Chi Tai, Kwang-Jow Gan, Cher-Shiung Tsai, Yaw-Hwang Chen
- APCCAS
- 2006

AND and NAND logic gate based on the negative differential resistance (NDR) device is demonstrated. This NDR device is made of metal-oxide-semiconductor field-effecttransistor (MOS) devices that could exhibit the NDR characteristic in the current-voltage curve by suitably arranging the MOS parameters. The devices and circuits are implemented by the standard… (More)

- Cher-Shiung Tsai, Chung-Chih Hsiao, +8 authors Yaw-Hwang Chen
- 2006

First, we create a MOS-NDR (negative differential resistance) cell and then put two MOS-NDR cells in cascode (totem-pole) structure. With MOBILE (monostable-bistable transition logic element) theorem we can built a MOS-NDR inverter by placing a NMOS in parallel with the lower part of the cascode structure. The MOS-NDR inverter cascades two Common-Source… (More)

- Yaw-Hwang Chen, Min-Tsung He
- 1995

We introduce an approach for calculating the quantum loop corrections in the φ theory. Differential regularization and background-field method are essential tools and are used to calculate the effective action of the theory to two-loop order. Our approach is considerably simpler than other known methods and can be readily extended to higher-loop… (More)

- Yaw-Hwang Chen
- 1995

The method of differential regularization is applied to calculate explicitly the one-loop effective potential of a bosonized Nambu–Jona-Lasinio model consisting of scalar and pseudoscalar fields. The regularization scheme independent relation for the σ mass sum rule is obtained. This method can be readily applied to extended NJL models with gauge fields.… (More)

- Dong-Shong Liang, Yaw-Hwang Chen, Chun-Min Wen, Chun-Da Tu, Kwang-Jow Gan, Cher-Shiung Tsai
- The 2006 IEEE International Joint Conference on…
- 2006

The cell of cellular neural network (CNN) studied in this work is realized by negative differential resistance (NDR) devices. The NDR device is composed of metal-oxide semiconductor field-effect transistor (MOS) devices. Therefore, we can fabricate the cellular neural network by standard CMOS or BiCMOS process.

- Dong-Shong Liang, Kwang-Jow Gan, +6 authors Long-Xian Su
- Fifth International Workshop on System-on-Chip…
- 2005

This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably… (More)