Yaw-Hwang Chen

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The evolutionary features based on the distributions of k-mers in the DNA sequences of various organisms are studied. The organisms are classified into three groups based on their evolutionary periods: (a) E. coli and T. pallidum (b) yeast, zebrafish, A. thaliana, and fruit fly, (c) mouse, chicken, and human. The distributions of 6-mers of these three(More)
The MOS-HBT-NDR device is made of metaloxidesemiconductor field-effect-transistor (MOS) and heterojunction bipolar transistor (HBT) devices, but it can show the negativedifferential-resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. We demonstrate a fivevalued logic circuit using the two-peak MOS-HBT-NDR circuit as the(More)
This paper describes the design of a four-valued memory cell based on a three-peak MOS-NDR circuit. We connect three MOS-NDR devices in parallel that can create a three-peak current-voltage curve by suitably arranging the parameters. Due to its folding I-V characteristics, multiple-peak NDR device is a very promising device for multiple-valued logic(More)
PACS numbers: 11.10.Gh, 11.15.Bt, 12.38.Bx ABSTRACT A split dimensional regularization, which was introduced for the Coulomb gauge by Leibbrandt and Williams, is used to regularize the spurious singularities of Yang-Mills theory in the temporal gauge. Typical one-loop split dimensionally regularized temporal gauge integrals, and hence the renormalization(More)
AND and NAND logic gate based on the negative differential resistance (NDR) device is demonstrated. This NDR device is made of metal-oxide-semiconductor field-effecttransistor (MOS) devices that could exhibit the NDR characteristic in the current-voltage curve by suitably arranging the MOS parameters. The devices and circuits are implemented by the standard(More)
First, we create a MOS-NDR (negative differential resistance) cell and then put two MOS-NDR cells in cascode (totem-pole) structure. With MOBILE (monostable-bistable transition logic element) theorem we can built a MOS-NDR inverter by placing a NMOS in parallel with the lower part of the cascode structure. The MOS-NDR inverter cascades two Common-Source(More)
We introduce an approach for calculating the quantum loop corrections in the φ theory. Differential regularization and background-field method are essential tools and are used to calculate the effective action of the theory to two-loop order. Our approach is considerably simpler than other known methods and can be readily extended to higher-loop(More)
The cell of cellular neural network (CNN) studied in this work is realized by negative differential resistance (NDR) devices. The NDR device is composed of metal-oxide semiconductor field-effect transistor (MOS) devices. Therefore, we can fabricate the cellular neural network by standard CMOS or BiCMOS process.
This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably(More)