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—The MOS-HBT-NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) and heterojunction bipolar transistor (HBT) devices, but it can show the negative-differential-resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. We demonstrate a five-valued logic circuit using the two-peak MOS-HBT-NDR circuit(More)
The evolutionary features based on the distributions of k-mers in the DNA sequences of various organisms are studied. The organisms are classified into three groups based on their evolutionary periods: (a) E. coli and T. pallidum (b) yeast, zebrafish, A. thaliana, and fruit fly, (c) mouse, chicken, and human. The distributions of 6-mers of these three(More)
This paper describes the design of a four-valued memory cell based on a three-peak MOS-NDR circuit. We connect three MOS-NDR devices in parallel that can create a three-peak current-voltage curve by suitably arranging the parameters. Due to its folding I-V characteristics, multiple-peak NDR device is a very promising device for multiple-valued logic(More)
—AND and NAND logic gate based on the negative differential resistance (NDR) device is demonstrated. This NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) devices that could exhibit the NDR characteristic in the current-voltage curve by suitably arranging the MOS parameters. The devices and circuits are implemented by the(More)
The behavior of two frequency divider circuits using negative differential resistance (NDR) circuit is studied. This NDR circuit is made of three resistors (R) and two bipolar-junction-transistor (BJT) devices. It can show the NDR characteristic in its current-voltage curve by suitably designing the resistances. We discuss a dynamic frequency divider, which(More)
A novel multiple-valued memory circuit design using multiple-peak negative differential resistance (NDR) circuit based on standard SiGe process is demonstrated. The NDR circuit is designed based on the combination of metal-oxide-semiconductor field-effect-transistor (MOS) and hetero-junction-bipolar-transistor (HBT) devices. However, we can obtain the(More)
The cell of cellular neural network (CNN) studied in this work is realized by negative differential resistance (NDR) devices. The NDR device is composed of metal-oxide semiconductor field-effect transistor (MOS) devices. Therefore, we can fabricate the cellular neural network by standard CMOS or BiCMOS process.
We propose a new MOS-NDR device that is composed of the metal-oxide-semiconductor field-effect- transistor (MOS) devices. This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage characteristics by suitably modulating the MOS parameters. We design a logic circuit which can operate the inverter, NOR, and(More)