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Journals and Conferences
We report an all-solid-state laser system that generates over 200 mW cw at 244 nm. An optically pumped semiconductor laser is internally frequency doubled to 488 nm. The 488 nm output is coupled to an external resonator, where it is converted to 244 nm using a CsLiB(6)O(10) (CLBO) crystal. The output power is limited by the available power at 488 nm, and no… (More)
We investigate the effect of water impurity in a CsLiB(6)O(10) (CLBO) crystal on the ultraviolet properties of the bulk laser-induced damage threshold (LIDT) and transmittance. The water impurity was eliminated by heating the CLBO sample with dimensions of 5 mm x 5 mm x 10 mm at 150 degrees C in an ambient atmosphere and subsequently in a dry atmosphere.… (More)
GaN-based optoelectronic and electronic devices such as light-emitting diodes (LEDs), laser, and heterojunction field-effect transistors (HFETs) typically use material grown on foreign substrates such as sapphire, Si, and SiC. However, thermal and lattice mismatch present prevent attainment of quality films deemed necessary by ever increasing demand on… (More)
We constructed a laser scanning terahertz (THz) imaging system for high-speed imaging by using a galvano scanner and an organic nonlinear optical crystal, DASC, as a two-dimensional THz emitter. Using this system, we succeeded in obtaining high-resolution THz images of a test sample.
Bis[4-dimethylamino-N-methyl-4-stilbazolium] terephthanate (BDAS-TP) was newly designed as an organic nonlinear optical material. Broadband terahertz pulses have been generated in the single crystal by optical rectification of 70 fs pulses from erbium doped fiber laser operating at 1560 nm.
CsB<inf>3</inf>O<inf>5</inf> (CBO) is an excellent nonlinear optical crystal and can be grown by top-seeded solution growth (TSSG) from self flux solutions. In this research, crystals with different cooling rates were grown to attempt to improve the crystal quality. Our investigations showed that, after cooling process, the scattering centers and optical… (More)
We attempted the growth of CsLiB<inf>6</inf>O<inf>10</inf> in dry atmosphere. Devices fabricated from dry-grown crystal had demonstrated 1 week of continuous operation without shifting the crystal at the output power of 100 mW at 199 nm.
Using a diode-pumped Q-switched Nd:YAG laser as the pump source, 198.5-nm was constructed. With 1.15 W of average power at 1064 nm, 12 mW of average output power was obtained at 198.5 nm.
We succeeded in growing single crystal of bis[4-dimethylamino-N-methyl-4-stilbazolium] terephthanate (BDAS-TP) by using a solution-slow-cooling technique. We obtained a… (More)