Yasuhiro Shiraki

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A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under(More)
The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate(More)
Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime.(More)
In this paper, a new function unit binding approach based on SAT is proposed. Differently from previous approaches, which heuristically minimize the total numbers of inputs of multiplexers, the proposed approach generates SAT formulas that constrain the numbers of inputs of specific multiplexers to certain numbers and produces a solution that satisfies the(More)
Related Articles High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain J. Appl. Phys. 111, 073518 (2012) Oxygen-diffusion limited metal combustions in Zr, Ti, and Fe foils: Timeand angle-resolved x-ray diffraction studies J. Appl. Phys. 111, 063528 (2012) Electron temperature in electrically(More)
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity ρ. The relaxation time τ(CR) shows a negative temperature dependence, which is similar to that of the transport scattering time τ(t) obtained from ρ. The(More)
Strong direct gap light emission is obtained from germanium-on-insulator (GOI) with tensile strain of 0.16% and ultra-high n-type doping concentration up to 1.0&#x00D7;10<sup>20</sup> cm<sup>-3</sup>. Microdisk resonators are also fabricated on GOI and show modulated emission spectra.
Room temperature light emission from Ge self-assembled quantum dots (QDs) embedded in L3-type photonic crystal (PhC) nanocavity is successfully demonstrated under current injection through a lateral PIN diode structure. The Ge QDs are grown on silicon-on-insulator (SOI) wafer by solid-source molecular beam epitaxy (SS-MBE), and the PIN diode is fabricated(More)
In this work, we studied the photovoltage response of an antidot lattice to microwave radiation for different antidot parameters. The study was carried out in a Si/SiGe heterostructure by illuminating the antidot lattice with linearly polarized microwaves and recording the polarity of induced photovoltage for different angles of incidence. Our study(More)
Microdisk integrated with a bus waveguide is fabricated on silicon-on-insulator substrate containing Ge self-assembled quantum dots as active medium. The device is demonstrated to be operated as both light-emitting diode and photodetector. At forward bias, carriers are injected into the microdisk and light emission at 1.45-1.6 μm is extracted through the(More)
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