High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain J. Oxygen-diffusion limited metal combustions in Zr, Ti, and Fe foils: Time-and angle-resolved x-ray diffraction studies J. Electron temperature in electrically isolated Si double quantum dots Appl. Computer simulations of crystallization… (More)
In this paper, a new function unit binding approach based on SAT is proposed. Differently from previous approaches, which heuristically minimize the total numbers of inputs of multiplexers, the proposed approach generates SAT formulas that constrain the numbers of inputs of specific multiplexers to certain numbers and produces a solution that satisfies the… (More)
In this work, we studied the photovoltage response of an antidot lattice to microwave radiation for different antidot parameters. The study was carried out in a Si/SiGe heterostructure by illuminating the antidot lattice with linearly polarized microwaves and recording the polarity of induced photovoltage for different angles of incidence. Our study… (More)
Strong direct gap light emission is obtained from germanium-on-insulator (GOI) with tensile strain of 0.16% and ultra-high n-type doping concentration up to 1.0×10<sup>20</sup> cm<sup>-3</sup>. Microdisk resonators are also fabricated on GOI and show modulated emission spectra.