Yasuhiko Ishikawa

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Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries for mass production. Here, we review the current state-of-the-art developments of silicon and germanium light sources toward monolithic integration. Quantum confinement(More)
  • Abdelrahman Zaher Al-Attili, Satoshi Kako, Muhammad K. Husain, Frederic Y. Gardes, Naoki Higashitarumizu, Satoshi Iwamoto +6 others
  • 2015
(2015) Whispering gallery mode resonances from Ge micro-disks on suspended beams. Ge is considered to be one of the most promising materials for realizing full monolithic integration of a light source on a silicon (Si) photonic chip. Tensile-strain is required to convert Ge into an optical gain material and to reduce the pumping required for population(More)
Three-dimensional structures of microelectro-mechanical systems (MEMS)-based Ge waveguide on a Si beam were fabricated for dynamic tuning of the fundamental absorption edge of Ge by external stressing. The application of various amounts of external forces up to 1 GPa onto the Si beam shows clear red-shifts in the absorption edge of Ge waveguides on the Si(More)
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