Yasemin Safak

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Available online xxxx a b s t r a c t The forward and reverse bias I–V, C–V, and G/x–V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22 Ga 0.78 N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x)(More)
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