Yasemin Safak

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
The forward and reverse bias I–V, C–V, and G/x–V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al0.22Ga0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiNx insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiNx) on the main electrical parameters such as(More)
The current transport mechanisms in (Ni/Au)–AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current–voltage characteristics in the temperature range of 80–380 K. In order to determine the true current transport mechanisms for (Ni/Au)–AlN/GaN SBDs, by taking the Js(tunnel), E0, and Rs as adjustable fit parameters, the experimental J–V(More)
  • 1