Yasemin Safak

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The current transport mechanisms in (Ni/Au)–AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current–voltage characteristics in the temperature range of 80–380 K. In order to determine the true current transport mechanisms for (Ni/Au)–AlN/GaN SBDs, by taking the Js(tunnel), E0, and Rs as adjustable fit parameters, the experimental J–V(More)
Available online xxxx a b s t r a c t The forward and reverse bias I–V, C–V, and G/x–V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22 Ga 0.78 N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x)(More)
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