Yared Lemma

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A 1 cm &#x00D7; 1 cm 4H-SiC N-IGBT exhibited a blocking voltage of 20.7 kV with a leakage current of 140 &#x03BC;A, which represents the highest blocking voltage reported from an MOS semiconductor power switching device to date. The device showed a V<sub>F</sub> of 6.4 V at an I<sub>C</sub> of 20 A, and a differential R<sub>on,sp</sub> of 28(More)
This study examines the role of Foreign Direct Investment (FDI) on technology transfer inEthiopian metal and engineering industries. Different researches and reports indicate thattechnological inflow through FDI is an important conduit in promoting local industries toupgrade and to be competitive in the market place. A quantitative survey of 47 metal(More)
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