Yanping Sui

Learn More
Reassortant technology was used to obtain three interspecific reassortant influenza viruses using three influenza viruses of A/Puerto Rico/8/34(H1N1), A/swine/Hebei/1/2005(H3N2) and A/chicken/Guangdong/126/2002(H9N2). The high-growth reassortant strains were H9/PR8, H3/H9N2 and H1/H9N2 that contained hemagglutinin (HA) and neuraminidase (NA) genes from the(More)
To evaluate the alteration of CD47 on RBCs of pigs infected with M. suis, we induced the experimental porcine eperythrozoonosis and collected the blood samples at the different time points. The result of analysis by flow cytometry after reaction with mouse-anti-human CD47 and caprine-anti-mouse IgG-FITC reagents indicated that the CD47 quantity on RBCs(More)
During cooling, considerable changes such as wrinkle formation and edge passivation occur in graphene synthesized on the Cu substrate. Wrinkle formation is caused by the difference in the thermal expansion coefficients of graphene and its substrate. This work emphasizes the cooling-induced edge passivation. The graphene-edge passivation can limit the(More)
Oxygen can passivate Cu surface active sites when graphene nucleates. Thus, the nucleation density is decreased. The CuO/Cu substrate was chosen for graphene domain synthesis in our study. The results indicate that the CuO/Cu substrate is beneficial for large-scale, single-crystal graphene domain synthesis. Graphene grown on the CuO/Cu substrate exhibits(More)
Boron doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films are deposited using layer-by-layer technique in radio frequency (RF) plasma enhance chemical vapor deposition system. Studies about the influence of gas pressure, RF power density and buffer layer in i1p interface on the microstructure and electrical properties of Boron doped nc-Si:H thin(More)
  • 1