Yannis Papananos

Learn More
An efficient modeling technique and a novel CAD tool for the accurate prediction of the performance of integrated inductors and transformers is presented. This generic and process-independent approach generates lumped-element models that easily plug into the RF IC design flow. Their accuracy is established through comparisons with measurements of numerous(More)
Application of the EKV3.0 model to 0.15mum CMOS technology with single poly, and buried channel PMOS, is presented with emphasis on scaling properties of the technology and the model. The EKV3.0 model is illustrated for its fit to NMOS and PMOS drain current, transconductances and output characteristics in weak, moderate and strong inversion over a large(More)
This paper presents an in-depth analysis of the operation of a CMOS single-chip three-dimensional inductor over a MOSFET structure at RF frequencies. Active circuitry is placed underneath the integrated inductors in order to take advantage of the vacant space. Measurements indicate that the operation of the MOSFET and of the inductor is affected in a(More)
This paper presents a study of harmonic distortion measurement and modeling in an 0.14um CMOS technology. Measurements and simulation of DC characteristics, as well as high-frequency harmonic distortion are presented. The new EKV3.0 compact MOSFET model is used to model DC and harmonic distortion characteristics.