Yanhui Tao

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We have investigated the unresolved transition array (UTA) emission around 13.5 nm from solid density tin and tin doped foam targets. Extreme ultraviolet (EUV) spectral measurements were made in the wavelength region 11–17 nm using a transmission grating spectrograph and the EUV in-band conversion efficiency was measured using an absolutely calibrated EUV(More)
We investigate the extreme-ultraviolet (EUV) emission from targets that contain tin as an impurity and the advantages of using these targets for ion debris mitigation by use of a magnetic field. The EUV spectral features were characterized by a transmission grating spectrograph. The in-band EUV emission energy was measured with a calorimeter of absolute(More)
A thin Sn film was investigated as a mass-limited target for an extreme ultraviolet (EUV) lithography source. It was found that those energetic ions that are intrinsic with the mass-limited Sn target could be efficiently mitigated by introducing a low-energy prepulse. High in-band conversion efficiency from a laser to 13.5 nm EUV light could be obtained(More)
A CO(2) laser system with flexible parameters was developed for fundamental research related to an extreme ultraviolet (EUV) lithography source. The laser is a master oscillator and power amplifier (MOPA) system, consisting of a master oscillator, an externally triggered plasma switch, a preamplifier, a main amplifier, and electronic synchronization units.(More)
A pulsed power generator CQ-4 was developed to characterize dynamic behaviors of materials under ramp wave loading, and to launch high velocity flyer plates for shock compression and hypervelocity impact experiments of materials and structures at Institute of Fluid Physics, China Academy of Engineering Physics. CQ-4 is composed of twenty capacitor and(More)
We present efforts to mitigate debris from laser-produced Sn plasma by introducing a low energy pre-pulse while keeping high in-band conversion efficiency from laser to 13.5 nm extreme ultraviolet (EUV) light. The basic idea is to separate the processes of plasma production and 13.5 nm EUV light generation. A low energy pre-pulse is introduced to create a(More)
The effect of focal spot size on in-band 13.5 nm extreme ultraviolet (EUV) emission from laser-produced Sn plasmas was investigated for an EUV lithography light source. Almost constant in-band conversion efficiency from laser to 13.5 nm EUV light was noted with focal spot sizes from 60 to 500 microm. This effect may be explained by the opacity of Sn(More)
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