Yang-Hua Chang

  • Citations Per Year
Learn More
Ultra thin HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> triple-layer gate dielectrics for advanced MIS capacitors have been characterized electrically. The triple-layer gate stacks after post-metal annealing (PMA) at various temperatures have been studied. Experimental results including leakage current, C-V characteristics, and TDDB are(More)
0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.03.019 * Corresponding author. Address: 123 University R 64002, Taiwan, ROC. Tel.: +886 5 534 2601x4329; fax E-mail address: changyh@yuntech.edu.tw (Y.-H. C An improved high voltage LDMOSFET with multiple-resistivity drift region is proposed. Using the 2-D process simulator(More)
In this paper, we propose a technique to determine thermal resistance of InGaP/GaAs heterojunction bipolar transistors (HBTs). The technique is based on Gummel measurement at only a few substrate temperatures. The major advantage of this technique is the simplicity in measurement, since the temperature-dependent parameter does not need to be determined for(More)
A new procedure to determine source/drain series resistance and effective channel length has been developed for MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered by differential and integration processes. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and(More)