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ii ACKNOWLEDGEMENTS I would first of all like to thank Dr. Schrimpf for his continual support, confidence, and guidance throughout this project. Not only has Dr. Schrimpf been a tremendous source of assistance and encouragement, but I would not even be a graduate student if it were not for Dr. Schrimpf's quick responses to my numerous e-mails, and his(More)
Variability from different sources such as layout-dependent effects due to strain has been a main obstacle against aggressive design rules and reducing corner margins in 32nm node and beyond. This paper reports and demonstrates a model development and verification platform to accurately address layout dependences due to strain. This platform has been(More)
Professor Sokrates T. Pantelides ii ACKNOWLEDGMENTS I would first of all like to thank my husband Pierre who has been supportive and patient with me on my journey of attaining a Ph.D. He believed in me even when I did not believe in myself, he listened countless times to my presentations and helped me perfect them. I would also like to thank my parents and(More)
Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leakage current and transistor mismatch both increase after(More)
Process Design Kit (PDK) is becoming extremely complex in order to address variability from different sources such as layout-dependent effects at 28nm node and beyond. The increasing importance of layout parasitic also brings more complexity into PDK verifications. This paper reports and demonstrates a verification flow and platform to qualify the advanced(More)
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