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We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent(More)
We report the growth and characterization of single-crystalline Sn-doped In2O3 (ITO) and Mo-doped In2O3 (IMO) nanowires. Epitaxial growth of vertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electrical transport measurements show that these nanowires are high-performance(More)
Silicon, one of the most promising candidates as lithium-ion battery anode, has attracted much attention due to its high theoretical capacity, abundant existence, and mature infrastructure. Recently, Si nanostructures-based lithium-ion battery anode, with sophisticated structure designs and process development, has made significant progress. However, low(More)
In situ thermal annealing was used for the first time to observe directly that Au nanoparticles, which were originally fully embedded in the near-surface region of TiO(2), can be tailored into hemispheres exposed at the surface at elevated temperature. Precise control of the size of the Au hemispheres was achieved by subsequent low-energy ion sputtering.(More)
Deuterium (2H) and nitrogen-14 (14N) NMR spectroscopy were used to investigate the molecular dynamics of a lyotropic liquid crystal. Deuterium spectral densities of motion for the C1 deuterated site on the chain of the molecule decylammonium chloride (DACl) at the Larmor frequency 61.4 MHz and those for the (14)N at the headgroup (NH(3)(+)) at 28.9 MHz are(More)
  • Ji Zhang, Wei Sun, +10 authors Shan-Tao Zhang
  • 2017
Thin films of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO3 substrate with and without a conductive La0.7Sr0.3MnO3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the(More)
Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion(More)
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