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We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent(More)
Adv. Mater. 2009, 21, 817–823 2009 WILEY-VCH Verlag Gm Multiferroic BiFeO3 has attracted great interest due to its promising application tomagnetoelectric devices. In addition, the high remanent polarization and piezoelectric response of BiFeO3 thin films, which are comparable to those of conventional Ti-rich lead zirconia titanate, suggested BiFeO3 as a(More)
We report the growth and characterization of single-crystalline Sn-doped In2O3 (ITO) and Mo-doped In2O3 (IMO) nanowires. Epitaxial growth of vertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electrical transport measurements show that these nanowires are high-performance(More)
Low-energy-ion bombardment of semiconductors can lead to the development of complex and diverse nanostructures. Of particular interest in these structured surfaces is the formation of highly ordered patterns whose optical, electronic, andmagnetic properties are different from those of bulk materials and might find technological uses. Compared to the low(More)
In situ thermal annealing was used for the first time to observe directly that Au nanoparticles, which were originally fully embedded in the near-surface region of TiO(2), can be tailored into hemispheres exposed at the surface at elevated temperature. Precise control of the size of the Au hemispheres was achieved by subsequent low-energy ion sputtering.(More)
Thin films of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO3 substrate with and without a conductive La0.7Sr0.3MnO3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the(More)
Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion(More)
We report on a systematic study of structural, optical, electrical, and magnetic properties of Zn1−xCoxO x=0.05–0.29 thin films codoped with Al 0.1% . Both codoped in which Co is cosputtered with other elements and -doped in which Co is doped digitally in the host matrix samples have been prepared and studied. Prior to doping of Co, growth conditions were(More)
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