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In this paper a conservative phase-field method based on the work of Sun and Beckermann [Y. Sun, C. Beckermann, Sharp interface tracking using the phase-field equation, J. Comput. Phys. 220 (2007)… Continue Reading
The energy gap of dilute nitride GaAsSbN has been studied. We found that the energy gap reduction induced by nitrogen incorporation is nearly independent of the Sb composition of the alloy,… Continue Reading
AbstractRoad profile extraction and analysis are essential tasks in transportation asset management. Current approaches use vehicle-borne laser sensors in order to precisely measure the variations in… Continue Reading
AbstractFeature conjugation is a major task in modern-day spatial analysis and contributes to efficient integration across multiple data sets. In this study, an efficient approach that utilizes the… Continue Reading
IEEE Transactions on Device and Materials…
In this paper, avalanche breakdown operation has been demonstrated to have a positive impact on RF linearity performance for silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) due to… Continue Reading
Abstract In this paper, a novel CMOS power amplifier (PA) with high output power and power added efficiency is designed to operate in the avalanche region by increasing the supply voltage for the… Continue Reading
IEEE 19th International Conference on Indium…
We report the incorporation behaviors of Sb and N in GaAsSbN epilayers grown by gas source molecular beam epitaxy. Our study reveals that N incorporation is independent of the growth temperature and… Continue Reading
In this letter, a noise deembedding method is presented to improve accuracy of on-wafer noise measurements of metal-oxide-semiconductor field-effect transistors. This method further removes parasitic… Continue Reading
Abstract Monitoring of the water level of reservoirs, rivers, and lakes is an essential task for hydraulic facility management and disaster mitigation. Nowadays, although automated instruments for… Continue Reading
20th International Conference on Indium Phosphide…
We report the fabrication of dilute nitride GaAsSbN/GaAs PIN detector with a cut-off wavelength over 1.5 mum. Effect of thermal annealing on the device characteristics is also presented. We found… Continue Reading