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This study examined the correlation between the off-state leakage current and dynamic on-resistance (RON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The RON transients in a Schottky-gate HFET (SGHFET) and metal-insulator-semiconductor HFET (MISHFET) were(More)
We report a p channel thin ®lm transistor (TFT) made of directly deposited microcrystalline silicon (lc-Si). The lc-Si channel material is grown by plasma-enhanced chemical vapor deposition (PECVD) using dc excitation of a mixture of SiH 4 , SiF 4 and H 2 , in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition(More)
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