Yahya Lakys

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Spin transfer torque (STT) is one of the most promising switching approaches for magnetic tunnel junction (MTJ) nanopillars to build up innovative nonvolatile memory and logic circuits. It presents low critical current (e.g., A at 65 nm), simple switching scheme, and fast-speed; however, it suffers from a number of reliability issues like stochastic(More)
Benefiting from Spin Transfer Torque (STT) switching approach, second generation of Magnetic RAM (MRAM) promises low power, great miniaturization prospective (<22 nm) and easy integration with CMOS process. It becomes actually a strong non-volatile memory candidate for both embedded and standalone applications. However STT-MRAM suffers from important(More)
As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into(More)
—As the fabrication technology node shrinks down to 90nm or below, high standby power becomes one of the major critical issues for CMOS high-speed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies such as FeRAM, MRAM, PCRAM and RRAM and so on, are under investigation to bring the(More)
—Spintronics-based non-volatile storage devices promise great potential to be integrated in reconfigurable circuits to overcome the major hurdles related to conventional flash and SRAM memories, such as low logic density, high standby power and long (re) boot latency. In this paper, we describe a compact design of configurable logic block based on Magnetic(More)
As the fabrication technology node shrinks down to 90nm or below, high standby power becomes one of the major critical issues for CMOS logic circuits due to the high leakage currents. A number of non-volatile storage technologies such as FRAM, MRAM, PCRAM and RRAM and so on, are under investigation to bring the non-volatility into the logic circuits and(More)
Several communication techniques are investigated in the first part of this paper: software radio, cognitive radio and encrypted communications. State of the art of research on agile and reconfigurable filters, passive as well as active, necessary for transceivers is then made and various tables for comparison are given. In the third part, a new theory for(More)
Thanks to its non-volatility, high write/sense speed and small size, Magnetic Tunnel Junction (MTJ) is under investigation to be integrated in the future reconfigurable computing circuits offering higher power efficiency and performance. Another advantage of MTJ is that it provides good radiation hardness compared with other storage technologies used in(More)
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