Yagya D. Sharma

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In this paper, we report a successful realization and integration of a gold two-dimensional hole array (2DHA) structure with semiconductor InAs quantum dot (QD). We show experimentally that a properly designed 2DHA-QD photodetector can facilitate a strong plasmonic-QD interaction, leading to a 130% absolute enhancement of infrared photoresponse at the(More)
We report on the multispectral properties of infrared photodetectors based on type II InAs/ Ga͑In͒Sb strain layer superlattices using an nBn heterostructure design. The optical and electrical properties of the midwave and long wave infrared ͑MWIR-LWIR͒ absorbing layers are characterized using spectral response and current-voltage measurements, respectively.(More)
—The quantum-confined Stark effect in intersublevel transitions present in quantum-dots-in-a-well (DWELL) detectors gives rise to a midIR spectral response that is dependent upon the detector's operational bias. The spectral responses resulting from different biases exhibit spectral shifts, albeit with significant spectral overlap. A postprocessing(More)
GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55μm with enhanced responsivity and 40GHz frequency bandwidth Appl. Optimization of thickness and doping of heterojunction unipolar barrier layer for dark current suppression in long wavelength strain layer superlattice infrared detectors Appl. Metal-semiconductor-metal photodetectors based on(More)
The authors report the design, growth, fabrication, and characterization of a low-strain quantum dots-in-a-well ͑DWELL͒ infrared photodetector. This novel DWELL design minimizes the inclusion of the lattice-mismatched indium-containing compounds while maximizing the absorption cross section by enabling larger active region volume. The improved structure(More)
—The use of resonant tunneling (RT) barriers in the design of quantum dots-in-a-well (DWELL) infrared photodetectors is reported. The design of RT barriers for a variety of goals has been discussed. For simple DWELL designs, we demonstrate 2–3 orders-of-magnitude reduction in the dark current, with significant increase in the specific detectivity () of the(More)
A midwave infrared camera ͑␭ c = 4.2 ␮m͒ with a 320ϫ 256 focal plane array ͑FPA͒ based on type-II InAs/ GaSb strain layer superlattice ͑SLs͒ has been demonstrated. The detectors consist of an nBn heterostructure, wherein the SL absorber and contact layers are separated by a Al 0.2 Ga 0.8 Sb barrier layer, which is designed to have a minimum valence band(More)
Extended spectral response in organic photomultiple photodetectors using multiple near-infrared dopants Extended spectral response in organic photomultiple photodetectors using multiple near-infrared dopants Appl. Implementation of a semi-transparent mid-infrared quantum well infrared photodetector simultaneously as a beamsplitter and a reference detector(More)