Yadong Tao

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This paper presents a carrier-based continuous analytic I-V model for long channel undoped (lightly doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. It is based on the solution of PoissonBoltzmann equation, and the current continuity equation of Pao-Sah current formulation in terms of the mobile carrier concentration under an appropriate(More)
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