Ya-Qing Bie

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Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated. Moreover, a CdSe-nanowire red-light detector powered by a nanoscale ZnO/GaN photovoltaic cell is also demonstrated, which extends the device function to a selective multiwavelength(More)
Bi₂Se₃ nanocrystals with various morphologies, including nanotower, nanoplate, nanoflake, nanobeam and nanowire, have been synthesized. Well-distinguished Shubnikov-de Haas (SdH) oscillations were observed in Bi₂Se₃ nanoplates and nanobeams. Careful analysis of the SdH oscillations suggests the existence of Berry's phase π, which confirms the quantum(More)
Graphene has various potential applications owing to its unique electronic, optical, mechanical and chemical properties, which are primarily based on its two-dimensional nature. Graphene-based vertical devices can extend the investigations and potential applications range to three dimensions, while interfacial properties are crucial for the function and(More)
massless Dirac fermions, [ 3 ] extremely high mobility, [ 4 ] special quantum Hall effect, [ 3 ] and gate voltage tunable optical transitions. [ 5 ] Those remarkable electrical and optical properties make it an attractive candidate for potential applications in integrated bipolar fi eld-effect transistors (FETs), [ 6 ] transparent electrodes for solar(More)
The mechanical properties of ultrathin membranes have attracted considerable attention recently. Nanoindentation based on atomic force microscopy is commonly employed to study mechanical properties. We find that the data processing procedures in previous studies are nice approximations, but it is difficult for them to illustrate the mechanical properties(More)
Semiconductor nanowires have been successfully assembled into various kinds of nanodevices, including fi eld effect transistors, [ 1 , 2 ] nanolasers, [ 3 , 4 ] nanosensors, [ 5 , 6 ] light-emitting diodes (LEDs), [ 7–9 ] energy conversion devices, [ 10–14 ] and a host of other devices. Specifi cally, ZnO nanowires have attracted a great deal of attention(More)
Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air(More)
Vertically architectured stack of multiple graphene field-effect transistors (GFETs) on a flexible substrate show great mechanical flexibility and robustness. The four GFETs are integrated in the vertical direction, and dually gated GFETs with graphene channel, PMMA dielectrics, and graphene gate electrodes are realized.
A seven orders of magnitude increase in the current on/off ratio of ZnO nanowire field-effect transistors (FETs) after Ga( + ) irradiation was observed. Transmission electron microscopy characterization revealed that the surface crystal quality of the ZnO nanowire was improved via the Ga( + ) treatment. The Ga( + ) irradiation efficiently reduces(More)
We report the temperature dependent photoluminescence (PL) properties of monolayer graphene-Au-nanoparticle-ZnO (GAZ) microwire hybrid structures. By comparing with the bare ZnO wire without coverage of graphene, a three times enhancement of PL was found in the GAZ hybrid structures. The enhancement is attributed to the coupling between the PL photons from(More)