On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy
- Y. ZohtaM. Watanabe
- 1 March 1982
Physics
It is pointed out that a widely used simple formula may give rise to serious errors in profiling deep level concentrations from capacitance transient experiments. A correction formula is derived…
Donor Levels in Si-Doped AlGaAs Grown by MBE
- M. WatanabeK. MorizukaM. MashitaY. AshizawaY. Zohta
- 20 February 1984
Physics, Engineering
Donor levels of MBE-grown Si-doped AlxGa1-xAs have been characterized by a combination of the C-V method and capacitance and current transient spectroscopy. Although most electrons are supplied by…
Frequency dependence of C and ΔV/Δ(C−2) of Schottky barriers containing deep impurities
- Y. Zohta
- 1 September 1973
Physics
Determination of the spatial distribution of deep centers from capacitance measurements of pn junctions
Effects of a spatial distribution of deep centers on the junction capacitance are reported for the first time. It is shown that the spatial distribution of deep centers can be calculated from…
APPLICATION OF RADIATION-ENHANCED DIFFUSION TO MICROWAVE TRANSISTOR FABRICATIONS AND ITS DESIGN OPTIMIZATIONS.
- S. YamamotoT. SakamotoY. ZohtaS. Mimura
- 1971
Engineering, Physics
Anomalous I–V characteristics of semiconductor heterojunction diodes due to transmission resonance
- Y. ZohtaK. TsudaY. Hiraoka
- 1 March 1986
Physics
As sizes of semiconductor devices are reduced, quantum mechanical properties of electrons play an important role. For small heterojunction diodes including a potential barrier, the influence of…
Frequency dependence of ΔVΔ(C−2) of MOS capacitors
- Y. Zohta
- 1 December 1974
Physics, Engineering
C‐V and G‐V characteristics of ion‐implanted MOS structures depending upon the geometrical structure of the implanted region
- Y. Zohta
- 1 April 1977
Engineering, Physics
It is found that the capacitance‐voltage (C‐V) and conductance‐voltage (G‐V) characteristics of MOS capacitors, into which ions of the opposite conductivity type are implanted, depend strongly upon…
Application of radiation enhanced diffusion to microwave transistor fabrication
- S. YamamotoT. Sakamoto T. Abe
- 1971
Engineering, Physics
The use of preferential Radiation Enhanced Diffusion (RED) of impurities from an n+silicon substrate doped with antimony to an n-silicon epitaxial layer by proton irradiation followed by the…
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