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Electrical spin injection in a ferromagnetic semiconductor heterostructure
Conventional electronics is based on the manipulation of electronic charge. An intriguing alternative is the field of ‘spintronics’, wherein the classical manipulation of electronic spin in
Quantum Hall Effect in Polar Oxide Heterostructures
Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.
High Mobility Thin Film Transistors with Transparent ZnO Channels.
We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfOx buffer layer between ZnO channel and amorphous silicon?nitride gate insulator. The TFT structure, dimensions, and
Observation of the fractional quantum Hall effect in an oxide.
The present study represents a technological advance in oxide electronics that provides opportunities to explore strongly correlated phenomena in quantum transport of dilute carriers in MgZnO/ ZnO heterostructures grown by molecular-beam epitaxy.
Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field
A decrease and suppression in the fine-structure splitting of the studied single quantum dot was observed with the field, which enabled the generation of polarization-entangled photons with a high fidelity of 0.72±0.05.
Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb
Abstract (Ga,Mn)Sb with a few percent order of Mn was grown by molecular beam epitaxy. Two growth temperature ranges were studied; one is normal growth temperature of GaSb (∼560°C) and the other is
Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors.
The relation between the conduction property and the work function of the contact metal in carbon nanotube field-effect transistors (NTFETs) suggests that the Fermi-level pinning is weak at the interface, in contrast to conventional semiconductors such as Si and GaAs.
Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures
We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer
Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films
The authors would like to acknowledge helpful discussions with Prof. K. O’Grady of the University of York and Prof. N. Tanaka for access to the microscopes at Nagoya University and the Japan Fine