Author pages are created from data sourced from our academic publisher partnerships and public sources.
Electronic structure of semiconductor nanowires
We compute the subband structure of several group IV and III-V 001-, 110-, and 111-oriented nanowires using sp 3 and sp 3 d 5 s * tight-binding models. In particular, we provide the band gap energy… Expand
Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the… Expand
Effects of strain on the carrier mobility in silicon nanowires.
We investigate electron and hole mobilities in strained silicon nanowires (Si NWs) within an atomistic tight-binding framework. We show that the carrier mobilities in Si NWs are very responsive to… Expand
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
By means of numerical simulation based on the Green’s function formalism on a tight binding Hamiltonian, we investigate different possibilities of achieving a strong effect of negative differential… Expand
Charge transport in chemically doped 2D graphene.
- A. Lherbier, X. Blase, Y. Niquet, F. Triozon, S. Roche
- Physics, Medicine
- Physical review letters
- 18 July 2008
We report on a numerical study of electronic transport in chemically doped 2D graphene materials. By using ab initio calculations, a self-consistent scattering potential is derived for boron and… Expand
Quantum confinement in germanium nanocrystals
The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We… Expand
Transport properties of graphene containing structural defects
- A. Lherbier, Simon M.-M. Dubois, X. Declerck, Y. Niquet, S. Roche, Jean-Christophe Charlier
- Materials Science, Physics
- 20 April 2012
We propose an extensive report on the simulation of electronic transport in two-dimensional graphene in presence of structural defects. Amongst the large variety of such defects in sp2 carbon-based… Expand
Transport length scales in disordered graphene-based materials: strong localization regimes and dimensionality effects.
We report on a numerical study of quantum transport in disordered two dimensional graphene and graphene nanoribbons. By using the Kubo and the Landauer approaches, transport length scales in the… Expand
Method for tight-binding parametrization: Application to silicon nanostructures
We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved… Expand
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor.
We investigate the gate-induced onset of few-electron regime through the undoped channel of a silicon nanowire field-effect transistor. By combining low-temperature transport measurements and… Expand