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Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si:C process is used to deposit n+/p/n+ layers which are fabricated into 300-nm-diameterExpand
Acoustic rhinometric evaluation of nasal cavity and nasopharynx after adenoidectomy and tonsillectomy.
The occurrence of upper airway obstruction is frequently seen in patients with adenotonsillar hypertrophy. These patients usually also show hypertrophied inferior turbinates even without any otherExpand
Back-directional Gated Spectroscopic Imaging for Diffuse Light Suppression in High Anisotropic Media and Its Preclinical Applications for Microvascular Imaging
There is emerging evidence that microvascular alterations may occur early, even at early stages of carcinogenesis, as indispensable participants in tumor growth. However, the exact spatial extents ofExpand
A Financial Services Gaming Simulation
The goal of this project was to design a card game simulation of financial trade markets. In a trading environment, a market maker quotes two prices for a specific type of financial instrument, suchExpand
Space-charge-limited current conductions in La/sub 2/O/sub 3/ thin films deposited by e-beam evaporation after low temperature dry-nitrogen annealing [gate oxide applications]
TLDR
Lanthanum oxide (La/sub 2/O/sub 3/) was deposited by e-beam evaporation on n-Si(100), and annealed at 200/spl deg/C in dry-nitrogen ex-situ for 5 min. Expand
Record-low Injection-current Strained SiGe variable optical attenuator with optimized lateral PIN junction
We demonstrate record-low injection-current VOAs using strain-enhanced free-carrier absorption in SiGe. The strained SiGe VOA with optimized lateral PIN junction exhibits 20-dB attenuation byExpand
A smooth drive investigation of the discontinuous primary linear synchronous motor in the re-accelerator without position feedback
The discontinuous primary linear synchronous motor is proposed as a driving source in the middle-distance transportation systems in factories and facilities. However, velocity pulsation of theExpand
Analysis of electrical characteristics of La/sub 2/O/sub 3/ thin films annealed in vacuum and others
Lanthanum oxide (La/sub 2/O/sub 3/) was deposited by MBE on n-Si(100), and annealed at 400/spl deg/C in vacuum in-situ for 90 min. Ag or Al metal electrodes were attached. From the electric field andExpand
CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si
In this paper, we present heterogeneous integration of SiGe/Ge and III-V semiconductors on Si for electronic-photonic integrated circuits through CMOS photonics technologies. The introduction ofExpand