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High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate
The initial growth behaviors of GaSb on a GaAs substrate were studied using a high-resolution electron microscope (HRTEM). Four types of GaSb islands were observed by HRTEM. HRTEM micrographs showedExpand
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Dependence of the AlSb buffers on GaSb/GaAs(0 0 1) heterostructures
Abstract The strain-relief and structural properties of GaSb films with thin AlSb islands and thick AlSb buffer layers grown on GaAs (0 0 1) substrate at low temperature (LT) by molecular beamExpand
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Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrate
Abstract The growth of AlSb quantum dots (QDs) on Si(1 0 0) substrates by molecular beam epitaxy (MBE) was investigated using reflection high-energy electron diffraction and atomic force microscopyExpand
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The growth of β-LiGaO2 films using novel single precursors
Abstract We report the synthesis and characterization of single precursors for, and the growth of, LiGaO 2 films by metal organic chemical vapor deposition (MOCVD) using single precursors containingExpand
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GaN thin films by growth on Ga-rich GaN buffer layers
The influence of the composition of the low-temperature GaN buffer layer on the structural, electrical, and optical properties of the subsequently grown GaN epilayer by molecular-beam epitaxy isExpand
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Coexistence of a phase separation and an ordered structure in CdxZn1−xTe epilayers grown on GaAs(001) substrates
The coexistence of a phase separation and an ordered structure in CdxZn1−xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-areaExpand
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