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Femtosecond harmonic mode-locking of a fiber laser at 3.27 GHz using a bulk-like, MoSe2-based saturable absorber.
The saturable absorption and harmonic-mode-locking performance of the prepared SA are compared with those of previously demonstrated SAs that are based on other transition metal dichalcogenides (TMDs) to the best of the authors' knowledge.
All-optical NAND gate using cross gain modulation in semiconductor optical amplifiers
By using gain nonlinearity characteristics of semiconductor optical amplifier, an all-optical NAND gate at 10 Gbps is demonstrated. The all-optical NAND gate operates in single mechanism, which is
All-Optical AND Gate Using Cross-Gain Modulation in Semiconductor Optical Amplifiers
By using the cross-gain modulation of semiconductor optical amplifiers (SOAs), a novel all-optical AND gate has been successfully demonstrated at 10 Gb/s. Firstly, Boolean \overlineB was obtained
Mode-locked, 1.94-μm, all-fiberized laser using WS₂ based evanescent field interaction.
The results of this experiment confirm that WS2 can be used as an effective broadband saturable absorption material that is suitable to passively generate pulses at 2 μm wavelengths.
Orientation dependence of the fracture behavior of graphene
Abstract Graphene has unique mechanical properties in that it is simultaneously very strong and stretchy, which severely hampers the prediction of its orientation-dependent fracture behavior based on
All-optical half adder using cross gain modulation in semiconductor optical amplifiers.
By using the gain nonlinearity characteristics of semiconductor optical amplifier, an all-optical binary half adder at 10 Gbps is demonstrated and the possibilities for the enhanced complex logic operation and higher chances for multiple logic integration are explored.
Realization of All-Optical XOR, NOR, and NAND Gates in Single Format by Using Semiconductor Optical Amplifiers
By using the cross gain modulation (XGM) characteristics of semiconductor optical amplifiers (SOAs), multi-functional all-optical logic gates including XOR, NOR, and NAND gates are successfully
Metallic MXene Saturable Absorber for Femtosecond Mode-Locked Lasers.
It is demonstrated here that Ti3 CN, one of MXene compounds, can serve as an excellent mode-locker that can produce femtosecond laser pulses from fiber cavities.
A femtosecond pulse erbium fiber laser incorporating a saturable absorber based on bulk-structured Bi2Te3 topological insulator.
The use of a bulk-structured Bi(2)Te(3) topological insulator (TI) as an ultrafast mode-locker to generate femtosecond pulses from an all-fiberized cavity indicates that high-crystalline-quality atomic-layered films of TI, which demand complicated and expensive material processing facilities, are not essential for ultrafast laser mode-locking applications.