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Electric-field-induced superconductivity in an insulator.
Electric-field-induced superconductivity in an insulator is reported by using an electric-double-layer gating in an organic electrolyte using a pristine SrTiO(3) single-crystal channel, indicating this method as promising for searching for unprecedented superconducting states.
Large-area synthesis of highly crystalline WSe(2) monolayers and device applications.
The introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown and the resistor-loaded inverter based on a WSe 2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations.
Ambipolar MoS2 thin flake transistors.
The fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS(2), a member of the transition metal dichalcogenides, an archetypal layered material unambiguously displayed ambipolar operation.
Emergent phenomena at oxide interfaces.
Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces, with characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale.
High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids
Very recently, electric-field-induced superconductivity in an insulator was realized by tuning charge carrier to a high density level (1 × 1014 cm−2). To increase the maximum attainable carrier
Superconducting Dome in a Gate-Tuned Band Insulator
A large enhancement in the transition temperature Tc occurring at optimal doping in the chemically inaccessible low–carrier density regime is revealed, indicating that the superconducting dome may arise even in doped band insulators.
Control of carrier density by self-assembled monolayers in organic field-effect transistors
A new technique is discussed that enables us to control the charge density in the channel by using organosilane self-assembled monolayers (SAMs) on SiO2 gate insulators.
Ferroelectric polarization flop in a frustrated magnet MnWO4 induced by a magnetic field.
This result demonstrates that an electric polarization flop can be induced by a magnetic field in a simple system without rare-earth 4f moments.
Field-Induced Superconductivity in Electric Double Layer Transistors
Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier
Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
This work prepared metal–insulator–semiconductor field-effect transistors based on vanadium dioxide and found that electrostatic charging at a surface drives all the previously localized charge carriers in the bulk material into motion, leading to the emergence of a three-dimensional metallic ground state.