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Surface nanocrystallization of pure Cu induced by ultrasonic shot peening.
  • K. Li, Y. He, +7 authors K. Shin
  • Medicine, Materials Science
  • Journal of nanoscience and nanotechnology
  • 1 February 2017
Peening is mainly used as a method of surface treatment for microstructural modification in order to improve surface mechanical properties. The ultrasonic shot peening (USP) technique can causeExpand
  • 8
  • 1
Microstructural Characterization of SS304 upon Various Shot Peening Treatments
In the majority of cases, material failure initiates from the surface because of fatigue, creep, wear, corrosion, etc. Thus, optimizing the surface microstructure enhances the general behavior of aExpand
  • 13
  • 1
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Surface nanocrystallization of pure Cu induced by ultrasonic shot peening.
: Peening is mainly used as a method of surface treatment for microstructural modification in order to improve surface mechanical properties. The ultrasonic shot peening (USP) technique can causeExpand
  • 9
Alloying effect of copper on the corrosion properties of low-alloy steel for flue gas desulfurization system
The alloying effect of Cu for a flue gas desulfurization materials was investigated using the electrochemical methods in the modified green death solution and the surface analyses. The test resultsExpand
  • 5
Very high cycle fatigue behavior of SAE52100 bearing steel by ultrasonic nanocrystalline surface modification.
  • I. S. Cho, Y. He, +4 authors I. Park
  • Medicine, Materials Science
  • Journal of nanoscience and nanotechnology
  • 1 November 2014
In this paper, the SAE52100 bearing steel contained large quantities of cementite dispersed in ferrite matrix was subjected to the ultrasonic nanocrystalline surface modification (UNSM) treatmentExpand
  • 3
Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate
Abstract The microstructures of the P-GaN (250 nm)/GaN cap (~ 35 nm)/7 pairs of InGaN/GaN MQWs (multi-quantum wells)/n-GaN (3 μm)/HT (high temperature)-GaN (3 μm)/LT (low temperature)-GaN buffer (5Expand
  • 4