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Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
We report on the fabrication of gallium nitride (GaN) nanowire field-effect transistors (FETs) with both bottom-gate and top-gate structures, with very high yield using a unique pre-alignmentExpand
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The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate
An Fe-doped GaN buffer layer was employed in the growth of AlGaN/GaN high-electron mobility transistors (HEMTs) on Si substrates. In order to investigate the effects of an Fe-doped GaN buffer onExpand
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Fabrication and characterization of high breakdown voltage AlGaN∕GaN heterojunction field effect transistors on sapphire substrates
High-quality C-doped GaN buffers with a very low doping concentration were grown on 2in. c-plane sapphire substrates, and high-power AlGaN∕GaN heterojunction field effect transistors (HFETs) onExpand
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High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire
AlGaN/GaN heterojunction field effect transistors (HFETs) on sapphire substrates for high-power switching applications were fabricated using a self-align process. Without any additional field plateExpand
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Improved chloride resistance of high-strength concrete amended with coal bottom ash for internal curing
Abstract The present work studies a chloride resistance of high-strength concrete incorporating bottom ash aggregates for internal curing. The chloride diffusion in concrete was evaluated byExpand
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Novel method of evaluating the purity of multiwall carbon nanotubes using raman spectroscopy
We propose the quantitative method of evaluating the purity of multiwall carbon nanotubes(MWCNTs) using Raman spectroscopy. High purity MWCNTs were prepared by chemical vapor deposition (CVD) to beExpand
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  • Open Access
The effects of alloying and pressing routes in equal channel angular pressing of Cu-Fe-Cr and Cu-Fe-Cr-Ag composites
Equal channel angular pressing (ECAP) was carried out on Cu-Fe-Cr and Cu-Fe-Cr-Ag composites at room temperature. ECAPed Cu-Fe-Cr and Cu-Fe-Cr-Ag exhibited ultrafine-grained microstructures with theExpand
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High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance
High-quality C-doped GaN buffers grown on sapphire substrates were employed for the fabrication of high-power AlGaN/GaN heterojunction field effect transistors (HFETs). The fabricated deviceExpand
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Influences of cellulose nanofibril on microstructures and physical properties of waterborne polyurethane-based nanocomposite films.
We herein report the effects of carboxymethylated cellulose nanofibril (c-CNF) on the microstructure, thermal and mechanical properties of waterborne polyurethane (WPU)-based nanocomposite films. ForExpand
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