• Publications
  • Influence
Embossed Bragg Gratings Based on Organically Modified Silane Waveguides in InP.
  • J. Liu, Y. Lam, +4 authors J. Yao
  • Materials Science, Medicine
  • Applied optics
  • 20 September 2000
Considering the large variety of applications for optical glass waveguide gratings, the effective production method of embossing for micropatterning, and the unique advantages of InP-based materials,Expand
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Optical properties of potassium lithium niobate films
Abstract Potassium lithium niobate (KLN) thin films have been deposited on fused silica and MgO from metallorganic compounds through a sol-gel process. X-ray diffraction structure analysis has shownExpand
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  • 1
Photoluminescence and electroluminescence from copper doped zinc sulphide nanocrystals/polymer composite
Cu-doped ZnS nanocrystals were prepared in an inverse microemulsion at room temperature as well as under a hydrothermal condition. X-ray diffraction analysis showed that the diameter of the Cu-dopedExpand
  • 73
High-spatial-resolution quantum-well intermixing process in GaInAs/GaInAsP laser structure using pulsed-photoabsorption-induced disordering
Raman spectroscopy was used to study the spatial resolution of pulsed-photoabsorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser structure. A differential band gap shift of up to 60Expand
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Effects of titanium content on properties of sol-gel silica-titania films via organically modified silane precursors
The effects of titanium content on the properties of silica-titania films by the sol-gel method using γ-glycidoxypropyltrimethoxysilane (GLYMO), tetraethoxysilane (TEOS) and tetrapropylorthotitanateExpand
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Electrical properties of Schottky barrier in MSM-diode structures
The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier structures is analyzed by means of current-voltage (I-V) measurements at different temperatures. The reverseExpand
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A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure
Pulsed laser irradiation is one of the promising techniques in quantum well intermixing. Here, we report the development of a theoretical model to characterize the process with respect to variousExpand
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High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures
Quantum well intermixing (QWI) has been developed in III-V semiconductors to modify the quantum well (QW) profile in selected regions to enhance the blue shift of the optical absorption edge afterExpand
  • 1
Characterization of rapid thermal oxidation of AlAs on GaAs/AlGaAs structure
We report on the oxidation of the AlAs epitaxial layer on a GaAs/AlGaAs double-quantum-well laser structure using a one-step rapid thermal process. Oxidation of the AlAs layer was carried out underExpand
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Photonic integration of InGaAs/InGaAsP laser using low energy arsenic implantation induced disordering for quantum well intermixing
  • H.S. Lim, B. Ooi, +4 authors J. Beerens
  • Materials Science
  • Technical Digest. CLEO/Pacific Rim '99. Pacific…
  • 30 August 1999
Quantum well intermixing (QWI) using a neutral impurity induced disordering technique is of great interest in producing photonic integrated circuits (PICs). We report a high selectivity QWI processExpand
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