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In this work, we present a detailed electrical characterization of TiN\HfO2\Hf\TiN RRAM elements, and show for the first time the intrinsic switching characteristics in the low current operation regime (100uA till few uA's) of small scaled cells (20nm) under DC and fast ramps (up to 1MV/s) condition, using a newly proposed 2R test structure. The main(More)
Human patients with aniridia caused by heterozygous PAX6 mutations display abnormal glucose metabolism, but the underlying molecular mechanism is largely unknown. Disturbed islet architecture has been proposed as the reason why mice with complete inactivation of paired box 6 (PAX6) in the pancreas develop diabetes. This is not, however, the case in human(More)
In this work, we present a systematic electrical characterization of TiN\HfO<sub>2</sub>\Hf\TiN RRAM elements from the variability perspective. Variability of both programmed resistance values and switching triggering voltages has been evaluated on small scaled cells in a wide operating current range (2&#x03BC;A till 500&#x03BC;A's), for different oxide(More)
We demonstrate a self-rectifying, compliance-free, BEOL CMOS-compatible, resistive switching memory device, with nonfilamentary switching mechanism, forming-free operation, analog switching behavior and excellent device to device operation uniformity, down to the smallest device size. The cells have a reset switching current density of ~0.3MA/cm<sup>2</sup>(More)
This study was carried out to better understand the role of 24-epibrassinolide (EBR) in thermotolerance of melon (Cucumis melo L.). The melon seedlings were pretreated with various concentrations of EBR (0, 0.05, 0.1, 0.5, 1.0, and 1.5 mg dm−3) as foliar spray and then exposed to a high temperature (HT) stress. Exogenous EBR (0.5–1.5 mg dm−3) alleviated(More)
We optimize and investigate extensively the sub-&#x03BC;A bipolar operation of scaled Al<sub>2</sub>O<sub>3</sub>- and HfO<sub>2</sub>-based RRAM cells using carefully thinned dielectrics and Hf scavenging layer. Although isotropic scaling favors the sub-&#x03BC;A operation, switching variability remains intrinsically large due to low number of involved(More)
In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical(More)
We have demonstrated that by material engineering using different spices to dope HfO<sub>2</sub>, RRAM cell switching and endurance / retention reliability characteristics can be modulated. The changes in SET/RESET voltages, endurance optimal programming window and retention result mainly from the oxygen scavenging efficiency of Hf cap in presence of(More)
We report on the ineffectiveness of programming oxide-based resistive random access memory (OxRAM) at low current with a program and verify algorithm due to intrinsic relaxation of the verified distribution to the natural state distribution obtained by single-pulse programming without verify process. Based on oxygen defect formation thermodynamics and on(More)
We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al<sub>2</sub>O<sub>3</sub> electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu<sup>+</sup>(More)