Y.-W. Xuan

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A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor ͑MOS͒ structures with atomic-layer-deposited HfO 2 /Al 2 O 3 nanolaminates as gate dielectrics. A HfO 2 /Al 2 O 3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible(More)
The title compound, {[Cu(H(2)O)(6)][Na(2)(SO(4))(2)]}(n), has been prepared under mild hydro-thermal conditions and has been structurally characterized. It exhibits a structure in which the inorganic frameworks are three-dimensional, participating in extensive hydrogen bonding. Copper occupies a special position (). The Na atom is coordinated by five O(More)
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