Y. W. Chang

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Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene(More)
Articles you may be interested in Influence of Cu column under-bump-metallizations on current crowding and Joule heating effects of electromigration in flip-chip solder joints Effect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structure Appl. Investigation of void nucleation and propagation during(More)
The heterojunction effects of TiO2 nanotubes on photoconductive characteristics were investigated. For ITO/TiO2/Si diodes, the photocurrent is controlled either by the TiO2/Si heterojunction (p-n junction) or the ITO-TiO2 heterojunction (Schottky contact). In the short circuit (approximately 0 V) condition, the TiO2-Si heterojunction dominates the(More)
To keep up with the demand of continuous increase in device densities, the integration of three-dimensional integrated circuits (3D-IC) has become the most probable solution, and the utilization of ultra-fine-pitch microbump has emerged as an essential component of 3D-IC technology. In this study, a Kelvin bump structure was fabricated and resistances(More)
Recent results obtained using the data sample collected on the Υ(4S) resonance with the Belle detector at the KEKB asymmetric-energy e + e − collider and the Babar detector at the PEP-II asymmetric-energy e + e − collider are discussed. Measurements of several charmless and charmed baryonic B decay branching fractions are reported, and some behaviors and(More)
This paper demonstrates a 4-GHz monolithic SiGe heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (QVCO) using superharmonic coupling topology. The quadrature VCO at 4.17 GHz has phase noise of-116 dBc/Hz at 1MHz offset frequency, output power of-6 dBm and the figure of merit (FOM)-179 dBc/Hz. The core current consumption is(More)
shunt stubs, and unit lines have been modified to count for the fringing capacitance and discontinuity effects [10]. The filter shown in Figure 6 is fabricated on a substrate with a relative dielectric constant of 3.38, a loss tangent of 0.0025, and a thickness of 0.8 mm. The filter is rigorously modeled by emulator IE3D [12]. All final characteristic(More)
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