Y. Trouiller

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T.Devoivre, M.Lunenborg, C.Julien, J-P.Carrere, P.Ferreira, W.J.Toren, A.VandeGoor, P.Gayet, T.Berger, O.Hinsinger, P.Vannier, Y.Trouiller, Y.Rody, P-J.Goirand, R.Palla, I.Thomas, F.Guyader, D.Roy, B.Borot, N. Planes, S.Naudet, F.Pico, D.Duca, F.Lalanne, D.Heslinga and M.Haond STMicroelectronics, Crolles, France, PHILIPS Semiconductors, Crolles, France,(More)
Optical Proximity Correction (OPC) is used in lithography to increase the achievable resolution and pattern transfer fidelity for IC manufacturing. Nowadays, immersion lithography scanners are reaching the limits of optical resolution leading to more and more constraints on OPC models in terms of simulation reliability. The detection of outliers coming from(More)
The 22-nm technology node presents a real breakthrough compared to previous nodes in the way that state of the art scanner will be limited to a numerical aperture of 1.35. Thus we cannot “simply” apply a shrink factor from the previous node, and tradeoffs have to be found between Design Rules, Process integration and RET solutions in order to maintain the(More)
It is becoming more and more difficult to ensure robust patterning after OPC due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range of normal process variations. The techniques of Mask Rule(More)
Mask and metrology errors such as SEM (Scanning Electron Microscopy) measurement errors are currently not accounted for when calibrating OPC models. Nevertheless, they can lead to erroneous model parameters therefore causing inaccuracies in the model prediction if these errors are of the same order of magnitude than targeted modeling accuracy. In this(More)
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