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—Threshold voltage and drain-source current behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during(More)
In-process ultraviolet (UV) stimulated charging of ONO (oxide-nitride-oxide) stack is observed in fieldless microFlash (NROM) memory arrays. This problem is solved by introducing a UV blocking layer into the D1 dielectric. In this paper we discuss an alternative approach to the solution of charging problem. A micropartitioning technique is described that(More)
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