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Magnetic sensitivity and low-frequency noise in micro-Hall sensors based on pseudomorphic InAs quantum well channels are investigated as functions of InAs thickness. The strained InAs quantum wells with thickness between 0 and 20 Aring are added into lattice-matched doped channel In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.47</sub>Al<sub>0.48</sub>As/InP(More)
The noise spectrum in micro-Hall devices based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.1/Ga/sub 0.9/As/GaAs modulation-doped heterostructures was measured between 4 Hz and 65 kHz, allowing components due to thermal, 1/f, and generation-recombination to be characterized. Applying deep level noise spectroscopy (DLNS) in the temperature range of(More)
The formation of "sidewall nanowires" on shallow patterned mesa strips with a modulation depth of only 35 nm on GaAs (100) was demonstrated using molecular beam epitaxy. While self-assembled GaAs sidewall nanowire formation is observed near mesa strips running along [011], relatively thinner AlAs/GaAs layers are formed on identical mesa strips running along(More)
The fabrication of nanostructures such as quantum rods (QRDs), quantum dot pairs (QDPs), bridged QDPs, and dimpled QDs (DQDs) is achieved by an application of a shallow GaAs layer using solid source molecular beam epitaxy (MBE). More specifically, the shape transition and evolution process as well as the preservation of original dome shape of self-assembled(More)
A series of high-mobility Al<sub>0.12</sub>In<sub>0.88</sub>Sb/InSb heterostructures were grown by molecular beam epitaxy to investigate the fabrication of micro-Hall magnetic field sensors. By applying remote delta-doping of different densities to control the 2-D electron density in the quantum channel, as well as scattering mechanisms, the detection limit(More)
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