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The dynamic negative bias temperature instability (NBTI) on low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) was investigated in detail. Experimental results revealed the threshold voltage shift of LTPS TFTs after the NBTI stress decreases with increasing frequency, which is different from the frequency-independence of conventional(More)
A high-quality (Q) on-chip solenoid inductor has been fabricated by 0.18 mm CMOS technology with air-gap structure. The solenoid structure with laterally laid out structure saves the chip area significantly and the air-gap suppresses the parasitic capacitances to obtain high-Q value. Additionally, with software ANSYS simulation, the solenoid inductor also(More)
Light guide, a novel dielectric structure consisting of PE-Oxide and FSG-Oxide, has been developed to reduce crosstalk in 0.18-/spl mu/m CMOS image sensor technology. Due to the difference in refraction index (1.46 for PE-Oxide and 1.435 for FSG-Oxide), major part of the incident light can be totally reflected at the interface of PE-Oxide/FSG-Oxide, as the(More)
Pressure-induced amorphous-to-amorphous configuration changes in Ca-Al metallic glasses (MGs) were studied by performing in-situ room-temperature high-pressure x-ray diffraction up to about 40 GPa. Changes in compressibility at about 18 GPa, 15.5 GPa and 7.5 GPa during compression are detected in Ca(80)Al(20), Ca(72.7)Al(27.3), and Ca(66.4)Al(33.6) MGs,(More)
The characteristics of BF/sub 2/- or B-implanted polysilicon gate MOS capacitors with and without POCl/sub 3/ codoped were studied. It was found that the gate oxide thickness was increased very significantly with the number of high-temperature thermal cycles for BF/sub 2/-implanted polysilicon MOS capacitors, but this was not true for POCl/sub 3/-codoped(More)
A dielectric structure, air gap guard ring, has been successfully developed to reduce optical crosstalk thus improving pixel sensitivity of CMOS image sensor with 0.18-/spl mu/m technology. Based on refraction index (RI) differences between dielectric films (RI = 1.4 /spl sim/ 1.6) and air gap (RI = 1), total internal reflection occurred at(More)
In this paper, deep sub-micron CMOS process compatible high Q on chip spiral inductors with air gap structure were designed and fabricated. In the design the electromagnetic solver, SONNET, and the finite element program, ANSYS, were used for electrical-characteristics and maximum mechanical strength, respectively. The copper wires were capped with(More)
A glass/ITO/a-Si:H/Cr photodiode with a voltage selectable spectral response was fabricated. The diode consists of two back-to-back Schottky junctions. As the bias at the Cr side changes from 1.5 to -1.5 V, three color peak responses can be found, i.e., 480 nm (blue) at V=0.5 V, 530 nm (green) at 1.5 V, and 620 nm (red) at -1.5 V. The basic idea consists of(More)
In this letter, a short time low temperature oxidation of poly-Si channel has been studied to suppress the photoexcited current of the hydrogenated poly-Si TFTs. The effect of the treatment, which contains different-time oxidation and different-time post-hydrogenation, on the dark-current and photocurrent of poly-Si TFTs under off state were investigated in(More)
The impact of strain induced oxide trap charge on the performance and reliability of contact etch stop SiN layer capped, fully silicided metal gate, fully depleted SOI (FDSOI) CMOSFET is investigated. For an ultra thin nitride oxide, the position of these oxide trap charge can be evaluated by variable frequency noise spectrum and variable frequency charge(More)