Y. Ikemoto

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PURPOSE To analyze reproducibility of ADC measurements on different MRI scanners. METHODS AND MATERIALS Diffusion-weighted imaging (DWI) of a home-made phantom (gelatine of different concentration was enclosed in case of circle pillar shape) was performed with the following protocol; spin-echo type echo planar imaging; TR=7000 msec, TE=minimal, matrix=128(More)
This paper presents a delay test system which detects the delay faults located in LSI chips. Fault model and the measure of fault coverage are defined. This system features easy to use operation for providing the test data, including fail safe design to violation of scan design rule, quick turn around time for test data generation, and consideration for(More)
—Silicon-on-insulator (SOI) technology is being investigated for monolithic pixel device fabrication. The SOI wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOI (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel(More)
BL43IR of SPring-8 has been constructed for the infrared materials researches, and it covers a wide spectral range from 100 to 20,000 cm À1. The microspectroscopy station of this BL has a spatial resolution smaller than 10 lm in diameter in the mid-infrared region without apertures. This station had been mainly used within mid-infrared region, and its(More)
Truly monolithic pixel detectors were fabricated with 0:2 μm SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We(More)
Abstract– We are developing monolithic pixel devices utilizing a 0.2 μm Fully Depleted Silicon-on-Insulator (FD-SOI) process technology provided by OKI Semiconductor. We have investigated thinning the devices to 100 μm. Thinning enhances the feature of monolithic SOI sensors in views of minimizing the overall material and realizing full depleted devices.(More)
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