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We successfully developed and verified a complete compact model solution for layout dependent effect (LDE) of FinFET technology. LDE has significant impact on the device performances mainly due to the application of stressors and aggressive device scaling. With LDE, performance degradation may be up to 10% or more. In this work, compact model solution for(More)
In order to evaluate the efficacy of convalescent plasma therapy in the treatment of patients with severe acute respiratory syndrome (SARS), 80 SARS patients were given convalescent plasma at Prince of Wales Hospital, Hong Kong, between 20 March and 26 May 2003. Good outcome was defined as discharge by day 22 following the onset of SARS symptoms. Poor(More)
Correlation between created interface states and GIDL current increase in n-MOSFET’s during hot-carrier stress is quantitatively discussed. A trap-assisted two-step tunneling model is used to relate the increased interface-state density ( Dit) with the shift in GIDL current ( Id): Results show that under appropriate drain-gate biases, the two-step tunneling(More)
This paper utilizes the recently defined equivalent noise sheet resistance to study the noise performance of future sub-100nm MOSFETs using strain engineering, channel engineering with III-V materials, and quantum-well structures for low-noise applications. Experimental results for devices fabricated in UMC's five different CMOS technology nodes and other(More)
In this paper, we have demonstrated that cryogenic implantation applied to source and drain (SD) extension, pocket/halo and SD formation offers advantages for higher core and SRAM driving current and one order lower Ioff bulk (Ioffb) leakage in NMOS with reduced SRAM defectivity. Atomistic Kinetic Monte Carlo (KMC) modeling confirms that the(More)
A Critical Dimension SEM (CD-SEM: Critical Dimension Scanning Electron Microscope) is a dedicated system for measuring the dimensions of the fine patterns formed on a semiconductor wafer. CD-SEM is mainly used in the manufacturing lines of electronic devices of semiconductors. The measurement process includes OM Alignment, SEM Alignment, Addressing,(More)
Silicon nanostructure surface fabricated from metal-assisted etching have been demonstrated as high sensitivity matrix-free laser desorption/ionization mass spectrometry chip. The silicon nanostructure morphology was found to have direct effect to the mass spectrometry ionization efficiency. Creation of different silicon nanostructure morphologies by(More)
Curve detection is viewed as a process of hypothesis generation and hypothesis testing. Of the two, hypothesis generation has received much attention and many sophisticated post-processing strategies are published in the literature. In this work, the emphasis is shifted to the development of an efficient and effective hypothesis testing strategy to relieve(More)