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Erratum The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here: " Reference 1. (2017). The influence of hafnium doping on density-of-states in zinc oxide thin-film transistors deposited via atomic layer deposition. Nanoscale Res. permits unrestricted use, distribution, and reproduction in(More)
Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were(More)
Syntheses, optical, and electrochemical properties of novel C-9 fluorenyl substituted anthracenes linked by a tetrahedral sp(3)-hybridized carbon atom are reported for blue light emitting materials. Remarkably, an unoptimized organic light-emitting diode based on 1-fold fluorene-functionalized anthracene 3 exhibits a radiance of 4100 cd/m(2) at 12 V and a(More)
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