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Erratum The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here: " Reference 1. (2017). The influence of hafnium doping on density-of-states in zinc oxide thin-film transistors deposited via atomic layer deposition. Nanoscale Res. permits unrestricted use, distribution, and reproduction in(More)
Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were(More)
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