Xueyin Jiang

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Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were(More)
We present a detailed characterization of the active area uniformity of InGaAs/InP Single-Photon Avalanche Diodes (SPADs) from two different design iterations. Nonunifor-mity of the electric field within the device active area has been measured through 2-D scans of detection efficiency and timing response to a pulsed laser. Additionally, we measured the(More)
InGaAs/InP devices suitable as Single-Photon Avalanche Diodes (SPADs) for photon counting and photon timing applications in the near-infrared provide good detection efficiency and low time jitter, together with fairly low dark-count rate at moderately low temperatures. However, their performance is still severely limited by the afterpulsing effect, caused(More)
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