Xueren Zheng

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An analytical dc model is presented for amorphous In-Ga-Zn-Oxide (a-IGZO) thin film transistors on the basis of surface potential calculation by Lambert W equation, assuming an exponential trap states density within the bandgap. Charge sheet approximation is utilized to derive the trapped and free charges. The model results are compared with experimental(More)
Based on the Meyer-Neldel Rule (MNR), analytical drain current model is presented for the polycrystalline ZnO thin-film transistors at different temperatures. The MNR-based drain current model is developed from the surface-potential-based model considering the effective medium approximation (EMA). Applying the Meyer-Neldel Rule, the drain current model is(More)
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