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Ion implantation, followed by annealing process, often leads to nonuniform doping and considerable depletion effect in the polysilicon gate of submicron MOS devices. Such an effect can alter notably the subthreshold characteristics and invalidate the conventional subthreshold current model. This paper studies the polysilicon-gate depletion effects on the(More)
—For a sensorless predictive-peak-current-controlled boost converter, the output voltage steady-state error cannot be eliminated by voltage loop PI controller. The basic cause for this is investigated through analysis and theoretical approaches. To eliminate the voltage steady-state error and achieve high-accuracy current estimation, a comprehensive(More)
—A precise bandgap reference with intrinsic compensation for current-mirror mismatch is presented. In the proposed circuit, the small-signal current variations in the two current paths are self-compensated while in the conventional bandgap core they are multiplied. As a result, error caused by current-mirror mismatch has been much reduced in the proposed(More)
This paper presents an effective way to enhance power analysis attacks on AES hardware implementations. The proposed attack adopts hamming difference of intermediate results as power mode. It arranges plaintext inputs to differentiate power traces to the maximal probability. A simulation-based AES ASIC implementation and experimental platform are built.(More)