Xu Wanjing

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In this paper, the technology of MBE-based materials growth for high cutoff frequency (f/sub T/) SiGe HBTs was described. To grow a high-performance SiGe/Si hetero-junction multiple-structure, technologies such as the doping of secondary implantation (DSI), low-temperature doping, and antimony (Sb) surface pre-deposition, have been presented in the course(More)
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