Xiyuan Cao

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Hexagonal boron nitride ͑hBN͒ has emerged as an important material for various device applications and as a template for graphene electronics. Low-dimensional hBN is expected to possess rich physical properties, similar to graphene. The synthesis of wafer-scale semiconducting hBN epitaxial layers with high crystalline quality and electrical conductivity(More)
Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy Appl. High temperature thermoelectric properties of optimized InGaN A comparison of the growth modes of (100)-and (110)-oriented CrO2 films through the calculation of surface and interface energies A strain relief mode at interface of GaSb/GaAs grown by(More)
It is normally expected that an excellent optical material should have p → s-like transitions at the absorption edge. This is because the strength of p → s-like transitions usually is much stronger than those of p → p transitions, especially in those ionic semiconductors where the electronic states are more localized and behave as atomic characters. Here,(More)
Erbium doped InGaN alloys ͑InGaN:Er͒ were grown on Si ͑001͒ substrates using metal organic chemical vapor deposition. The growth of epitaxial films was accomplished by depositing InGaN:Er on GaN templates deposited on 7.3° off-oriented Si ͑001͒ substrates which were prepared by etching and subsequent selective area growth. X-ray diffraction measurements(More)
Hexagonal boron nitride (hBN) has been recognized as an important material for various device applications and as a template for graphene electronics. Low-dimensional hBN is expected to possess rich physical properties, similar to graphene. The synthesis of wafer-scale semiconducting hBN epitaxial layers with high crystalline quality and electrical(More)
Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy Appl. Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction Superlinear electroluminescence due to impact(More)
Coupling electron beams carrying information into electronic units is fundamental in microelectronics. This requires precision manipulation of electron beams through a coupler with a good focusing ability. In graphene, the focusing of wide electron beams has been successfully demonstrated by a circular p-n junction. However, it is not favorable for(More)
Hexagonal boron nitride (hBN) possesses extraordinary potential for solid-state neutron detector applications. This stems from the fact that the boron-10 (10 B) isotope has a capture cross-section of 3840 barns for thermal neutrons that is orders of magnitude larger than other isotopes. Epitaxial layers of hBN have been synthesized by metal organic chemical(More)
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