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We describe an object oriented sparse matrix library in C++ designed for portability and performance across a wide class of machine architectures. Besides simplifying the subroutine interface, the object oriented design allows the same driving code to be used for various sparse matrix formats, thus addressing many of the diiculties encountered with the(More)
A novel approach for thin film thickness and optical constant extraction from spectral reflectance data is presented here. This methodology combines the global minimization abilities of Adaptive Simulated Annealing with the high computational efficiency of Neural Networks to solve complex characterization problems in real time. The optical constants of many(More)
Submicron Deep Ultraviolet (DUV) photolithographic processes present significant manufacturing challenges due to the relatively small process windows often associated with these technologies. The sensitivity of the process to small upstream variations in incoming film reflectivity, photoresist coat and softbake steps as well as the bake plate temperature(More)
As we enter the DUV lithography generation, the developmental phase of the photolithography process is becoming crucial due to the high costs associated with the lithography equipment. Improvements in the modeling of chemically amplified resists are necessary to extract the maximum possible information from the minimum amount of experimentation. The poor(More)
Chemically Amplified Resists (CARs) are much less observable than their i-line counterparts due to the absence of photoresist actinic absorbency. CARs however, exhibit resist thinning during the Post-Exposure Bake process (PEB). A Design of Experiments (DOE) technique was employed around the exposure and the PEB temperature for a commercial DUV photoresist.(More)
New metrology for characterizing chemically amplified resist is needed in order to meet the stringent demands of the DUV lithographic technologies. In this paper, we present a general model for DUV resist optical constants. In this model, we assume that the photoresist is homogeneous and can be decomposed into several " components " according to their(More)
TCAD simulation is very important for DUV lithography process development and control. Traditional lithography process engineering has relied on short-loop and pilot-lot experiments to understand the effects of particular process control factors. However, experiments are very expensive, and the complexity of lithographic patterns and processes is such that(More)
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