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This paper proposes a quite accurate CMOS temperature sensor designed and developed for monitoring enviromental temperature. The sensor uses subthreshold MOSFET to measure temperature. The circuit has been implemented by IO thick-oxide MOS devices in 0.13um standard logic process and occupies a silicon area of 37&#x00D7;41um<sup>2</sup>. The performance of(More)
A novel method for SRAM cell standby leakage measurement is presented, which enables accurate testing and decoupling of sub-threshold leakage (I_sub), gate leakage (I_gate) and junction leakage (I_junc) in each SRAM cell transistor. Moreover, the array based technique can not only precisely measure small current but also compensate the impact from random(More)