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BACKGROUND AND OBJECTIVE Alpha-fetoprotein (AFP) has been widely used as a diagnostic marker. AFP is also increased in patients at high risk for hepatocellular carcinoma (HCC), ie those with chronic hepatitis. The percentage of lens culinaris agglutinin-reactive alpha-fetoprotein (AFP-L3%) has long been proposed as a marker for HCC, but has not been widely(More)
Rice is a major food crop with enormous biomass residue for biofuels. As plant cell wall recalcitrance basically decides a costly biomass process, genetic modification of plant cell walls has been regarded as a promising solution. However, due to structural complexity and functional diversity of plant cell walls, it becomes essential to identify the key(More)
INTRODUCTION Previous studies demonstrated that MicroRNA-92a (miR-92a) was significantly differential expressed between colorectal cancer (CRC) patients and control cohorts, which provide timely relevant evidence for miR-92a as a novel promising biomarker in the colorectal cancer patients. This meta-analysis aimed to evaluate potential diagnostic value of(More)
Copepods are one of the most abundant metazoans in the marine ecosystem, constituting a critical link in aquatic food webs and contributing significantly to the global carbon budget, yet molecular mechanisms of their gene expression are not well understood. Here we report the detection of spliced leader (SL) trans-splicing in calanoid copepods. We have(More)
In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N(More)
We reported that the peak efficiency together with the efficiency droop in InGaN-based light emitting diodes could be effectively modified through a simple and low-cost etch-regrown process in n-GaN layer. The etched n-GaN template contained pyramid arrays with inclined side planes. The following lateral overgrowth process from the etched n-GaN template(More)
  • Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang
  • 2013
The electrical characteristics of metallization contacts to flat (F-sample, without wet-etching roughed) and wet-etching roughed (R-sample) N-polar (Nitrogen-polar) n-GaN have been investigated. R-sample shows higher contact resistance (Rc) to Al/Ti/Au (~2.5 × 10(-5) Ω·cm(2)) and higher Schottky barriers height (SBH, ~0.386 eV) to Ni/Au, compared with that(More)
Graphene transparent conductive electrode (TCE) applications in nitride light emitting diodes (LEDs) are still limited by the large contact resistance and interface barrier between graphene and p-GaN. We propose a hybrid tunnel junction (TJ)-graphene TCE approach for nitride lateral LEDs theoretically and experimentally. Through simulation using commercial(More)
Polarization-reversed electron-blocking structure, which had negative polarization charges localized at the interface between the last quantum barrier (LQB) and electron-blocking layer (EBL), was demonstrated to remarkably improve the light-emitting efficiency of GaN-based blue light-emitting diodes (LEDs) numerically and experimentally. The improvement was(More)