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We have developed a facile and compatible method to in situ fabricate uniform metal nanowire networks on substrates. The as-fabricated metal nanowire networks show low sheet resistance and high transmittance (2.2 Ω sq(-1) at T = 91.1%), which is equivalent to that of the state-of-the-art metal nanowire networks. We demonstrated that the transmittance of the(More)
Organic-inorganic lead halide perovskite compounds are very promising materials for high-efficiency perovskite solar cells. But how to fabricate high-quality perovksite films under controlled humidity conditions is still an important issue due to their sensitivity to moisture. In this study, we investigated the influence of ambient humidity on(More)
A dense and homogenous flat wide-bandgap (1.75 eV) CH3NH3PbI2.1Br0.9 perovskite film was prepared via a facile halide exchange route. The planar-heterojunction solar cell shows an optimal power conversion efficiency of 12.67% with negligible current hysteresis due to the film's large grains and vertically oriented grain boundaries.
A high-quality CH3NH3PbI3 film is crucial in the manufacture of a high-performance perovskite solar cell. Here, a recrystallization process via facile fumigation with DMF vapor has been successfully introduced to self-repair of CH3NH3PbI3 films with poor coverage and low crystallinity prepared by the commonly used one-step spin-coating method. We found that(More)
Large organolead triiodide perovskite (OTP) grains with little intragranular defects are beneficial to minimize carrier recombination, hence boosting cell performance. However, OTP films deposited by the widely used one-step spin-coating route are usually composed of small grains, because the poor thermal stability of OTP inherently restricts the processing(More)
Laser irradiation as a rapid crystallization approach was successfully introduced to prepare homogeneous, dense-grained CH3NH3PbI3 films. Planar-heterojunction solar cells employing these high-quality films showed the optimal efficiency of 17.8% with a remarkably high open-circuit voltage of 1.146 V.
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